Comprehensive study of CNTFET based positive feedback differential amplifier

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dc.contributor.advisorSharma, K.K.
dc.contributor.authorJoshi, Preeti
dc.date.accessioned2018-06-28T09:27:59Z
dc.date.available2018-06-28T09:27:59Z
dc.date.issued2017-07
dc.description.abstractRegular Feature Size scaling down in today’s CMOS technologies has led to the supply voltage reduction in order to cut short the level of consumed power while maintaining the device reliability that is by preventing gate oxide breakage. In highly scaled processes variations in device parameters increases, which makes CMOS poor performer. The promising new transistor Carbon Nanotube avoids most of the limitations for MOSFET with its ballistic transport and ultra-long mean free path that make it suitable to work at sub-micron regime. These devices due to their small dimensions, shows large variations in their behaviour. In this Study, various parameters differential amplifiers at 32nm are evaluated using CMOS and CNTFET technology and a comparison has been drawn between them for different circuits of differential amplifier and it has been found that CMOS Positive Feedback Differential amplifier gives highest gain and large Bandwidth which get further improved when CNTFET is used for CMOS thus improving the performance of the circuit.en_US
dc.identifier.urihttp://krishikosh.egranth.ac.in/handle/1/5810055521
dc.keywordsamplifieren_US
dc.language.isoenen_US
dc.pages93en_US
dc.publisherG.B. Pant University of Agriculture and Technology, Pantnagar - 263145 (Uttarakhand)en_US
dc.research.problemAmplifiersen_US
dc.subElectronics and Communication Engineeringen_US
dc.subjectnullen_US
dc.themeCircuitsen_US
dc.these.typeM.Tech.
dc.titleComprehensive study of CNTFET based positive feedback differential amplifieren_US
dc.typeThesisen_US
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