Fabrication of bismuth telluride thin film and study of its electrical properties
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Date
2023-05
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CCSHAU, Hisar
Abstract
In this study, thin films of Bismuth Telluride were fabricated successfully by using thermal evaporation method onto different substrates (i.e., glass and silica) at ambient temperature. Their structural, morphological, optical and electrical properties were investigated by using X-ray diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Photoluminescence (PL) sepectrooscopy and SourceMeter Instrument, respectively. The FT-IR study showed that the prepared Bismuth Telluride films do not show any transmittance spectra. The XRD analysis revealed that the films were crystalline in nature. The surface mimages showed that the prepared films have a homogeneous and compact grain surface. The calculated optical band gap was about 2 eV for both types of film. The I-V characteristics of prepared thin films were analyzed at temperature ranges from 30°C to 100°C. It was found that the films fabricated onto silica substrates showed larger electrical conductivity than that of the films fabricated onto glass substrates. Also, the increment in electrical conductivity was observed with the temperature showing that the prepared films have negative temperature coefficient of resistance and exhibit the semiconductor behaviour.