A comprehensive study on MOSFET, nanowire FET and CNTFET for impact of gate dielectric on gate capacitance

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dc.contributor.advisorSharma, K.K.
dc.contributor.authorTiwari, Manas
dc.date.accessioned2018-07-12T06:30:19Z
dc.date.available2018-07-12T06:30:19Z
dc.date.issued2015-12
dc.identifier.urihttp://krishikosh.egranth.ac.in/handle/1/5810059319
dc.keywordsElectronics, Nanotechnologyen_US
dc.language.isoenen_US
dc.pages122en_US
dc.publisherG.B. Pant University of Agriculture and Technology, Pantnagar - 263145 (Uttarakhand)en_US
dc.research.problemCircuitsen_US
dc.subElectronics and Communication Engineeringen_US
dc.these.typeM.Tech.
dc.titleA comprehensive study on MOSFET, nanowire FET and CNTFET for impact of gate dielectric on gate capacitanceen_US
dc.typeThesisen_US
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