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Chaudhary Charan Singh Haryana Agricultural University, Hisar

Chaudhary Charan Singh Haryana Agricultural University popularly known as HAU, is one of Asia's biggest agricultural universities, located at Hisar in the Indian state of Haryana. It is named after India's seventh Prime Minister, Chaudhary Charan Singh. It is a leader in agricultural research in India and contributed significantly to Green Revolution and White Revolution in India in the 1960s and 70s. It has a very large campus and has several research centres throughout the state. It won the Indian Council of Agricultural Research's Award for the Best Institute in 1997. HAU was initially a campus of Punjab Agricultural University, Ludhiana. After the formation of Haryana in 1966, it became an autonomous institution on February 2, 1970 through a Presidential Ordinance, later ratified as Haryana and Punjab Agricultural Universities Act, 1970, passed by the Lok Sabha on March 29, 1970. A. L. Fletcher, the first Vice-Chancellor of the university, was instrumental in its initial growth.

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Subject: Physics × Author: Pooja ×
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    ThesisItemOpen Access
    Fabrication of bismuth telluride thin film and study of its electrical properties
    (CCSHAU, Hisar, 2023-05) Pooja; Paul Singh
    In this study, thin films of Bismuth Telluride were fabricated successfully by using thermal evaporation method onto different substrates (i.e., glass and silica) at ambient temperature. Their structural, morphological, optical and electrical properties were investigated by using X-ray diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Photoluminescence (PL) sepectrooscopy and SourceMeter Instrument, respectively. The FT-IR study showed that the prepared Bismuth Telluride films do not show any transmittance spectra. The XRD analysis revealed that the films were crystalline in nature. The surface mimages showed that the prepared films have a homogeneous and compact grain surface. The calculated optical band gap was about 2 eV for both types of film. The I-V characteristics of prepared thin films were analyzed at temperature ranges from 30°C to 100°C. It was found that the films fabricated onto silica substrates showed larger electrical conductivity than that of the films fabricated onto glass substrates. Also, the increment in electrical conductivity was observed with the temperature showing that the prepared films have negative temperature coefficient of resistance and exhibit the semiconductor behaviour.