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Govind Ballabh Pant University of Agriculture and Technology, Pantnagar

After independence, development of the rural sector was considered the primary concern of the Government of India. In 1949, with the appointment of the Radhakrishnan University Education Commission, imparting of agricultural education through the setting up of rural universities became the focal point. Later, in 1954 an Indo-American team led by Dr. K.R. Damle, the Vice-President of ICAR, was constituted that arrived at the idea of establishing a Rural University on the land-grant pattern of USA. As a consequence a contract between the Government of India, the Technical Cooperation Mission and some land-grant universities of USA, was signed to promote agricultural education in the country. The US universities included the universities of Tennessee, the Ohio State University, the Kansas State University, The University of Illinois, the Pennsylvania State University and the University of Missouri. The task of assisting Uttar Pradesh in establishing an agricultural university was assigned to the University of Illinois which signed a contract in 1959 to establish an agricultural University in the State. Dean, H.W. Hannah, of the University of Illinois prepared a blueprint for a Rural University to be set up at the Tarai State Farm in the district Nainital, UP. In the initial stage the University of Illinois also offered the services of its scientists and teachers. Thus, in 1960, the first agricultural university of India, UP Agricultural University, came into being by an Act of legislation, UP Act XI-V of 1958. The Act was later amended under UP Universities Re-enactment and Amendment Act 1972 and the University was rechristened as Govind Ballabh Pant University of Agriculture and Technology keeping in view the contributions of Pt. Govind Ballabh Pant, the then Chief Minister of UP. The University was dedicated to the Nation by the first Prime Minister of India Pt Jawaharlal Nehru on 17 November 1960. The G.B. Pant University is a symbol of successful partnership between India and the United States. The establishment of this university brought about a revolution in agricultural education, research and extension. It paved the way for setting up of 31 other agricultural universities in the country.

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20192
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Subject: Electronic and Communication Engineering × Start date: 2010 × Type: Thesis × Thesis Type: M.Tech ×
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    ThesisItemOpen Access
    A wideband microstrip patch antenna with single band-notch characteristic using defected ground structure
    (G.B. Pant University of Agriculture and Technology, Pantnagar - 263145 (Uttarakhand), 2019-09) Singh, Prabhat; Paras
    With the rapid growth of wireless communications in recent years, users need multiple frequency bands at the same time to access different services such as voice video and data. Therefore, it has become to have microstrip antenna (MSA) with a wide band to avoid employing multiple antennas to fulfil requirement of the users. The MSA is a revolution in the field of wireless applications due to its low cost, ease of installation, performance and low profile structure which make it a high quality contender. for many communication equipment. The main objective of this proposed work is to develop a wideband microstrip antenna using band-notch characteristic with DGS for wireless applications in the frequency range of 3.3-11.5 GHz. The proposed antenna is designed using Cavity model and is simulated and optimized using HFSSv.15 with a centre frequency of 5.3 GHz. Proposed antenna is used to operate at the frequency range of 3.3-11.5 GHz in wireless applications like WiMAX (3.6 GHz), Hi-LAN (5.15-5.35 GHz), WLAN IEEE802a (5.2 GHZ), and DSRC for a car to car communication (5.850-5.925 GHz) but band-notch characteristic used to reject band at frequency range (5.1-5.8). A 5.1-5.8 GHz might be used for WiMAX and other wireless applications. The proposed antenna is fabricated on a FR4 substrate having thickness 1.6 mm and loss tangent of 0.02. The fabricated antenna has dimensions 35×32.9×1.6 . The parameters in terms of reflection coefficient and VSWR for the proposed antenna (fabricated) are measured and compared with the simulated ones, which show good agreement. The proposed antenna is also compared with the earlier designed antennas. The measured broad bandwidth with reflection coefficient below -10 dB is found to be 8200 MHz in the frequency range from 3.3-11.5 GHz. Simulated peak gain of 8.92 dBi and radiation efficiency of 90-98% for the proposed antenna in the frequency range from 3.3-11.5 GHz are observed. The proposed antenna has a stable radiation pattern in both E and H planes.
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    ThesisItemOpen Access
    A robust 11T SRAM cell with improved SNM in 22nm technology
    (G.B. Pant University of Agriculture and Technology, Pantnagar - 263145 (Uttarakhand), 2019-08) Singh, Urwashi; Sharma, K.K.
    Static Random Access Memory (SRAM) is fundamental memory block used as caches in computers, processors and battery operated devices. In this proposed work, simulation study of different SRAM cell is carried out using Complementary Metal Oxide Semiconductor (CMOS) and Fin shaped Field Effect Transistor (FinFET) 22nm technology at the supply voltage of 0.8V with HSPICE tool. As the technology scaled in nanometer range, the Short Channel Effects (SCEs) causes degradation in the performance of the CMOS devices. This SCE is minimized by using FinFET devices at lower technology node. The performance metrics such as Hold SNM, Read SNM, Write SNM, access time, Static and Dynamic power is evaluated to check the behaviour of existing SRAM cells in 22nm node. A new 11T SRAM is also proposed and its performance metrics are calculated in both CMOS and FinFET 22nm technology. The simulation results of proposed 11T SRAM Cell is compared with existing SRAM cells. The proposed11T SRAM Cell achieves hold and read SNM as 285mV and write SNM as 336 mV in CMOS technology whereas the hold, read and write SNM in FinFET technology is 360mV, 360mV and 375mV, respectively. The proposed SRAM cell has shown enhanced SNM due to isolation of read and write path. The second important parameter, static power is 3.72nW in CMOS technology and 0.49nW in FinFET technology. Because of reduction in static power and improved SNM the proposed 11T SRAM cell can be used in low power high stability applications such as smart phones, LCD displays and CPU processor.